Examples of use:

• Surface analytical method based on the photoelectric effect
  • qualitative and quantitative element analysis (Z ≥ 3)
  • Determination of chemical states (oxidation states)
  • Detection limits element-dependent 0.1-1 at%
  • depth of information up to approx. 10 nm
  • Element and state distribution images (Imaging)
  • Depth profiles: non-destructive up to 10 nm by angle-dependent measurements (angle resolved XPS; ARXPS), destructive up to several 100 nm by ion etching, monoatomic Ar ions for inorganic and Ar cluster ions for organic materials
• Substrates
  • Metal
  • Polymers
  • Glass
  • Powders
  • Fibres
  • magnetic by arrangement

Device configuration:

• Dual X-ray source (Mg Kα: 1253.6 eV and Al Kα: 1468.6 eV)
• Monochromatic X-ray source (Al Kα: 1468.6 eV)
• 180° hemispherical analyzer
• DLD detector (Delay-Line Detection System, up to 128 channels in spectroscopy mode, images with 64,000 pixels)
• Self-regulating AXIS charge compensation with low-energy electrons
• Argon cluster ion source GCIS (Ar+ 0.1 - 5.0 keV; Ar+n up to 20.0 keV with n ~ 100-3000) for sample preparation and depth profiles by ion etching
• Heating up to 600°C and cooling down to -150°C in preparation and analysis chamber
• Optical positioning system
• Sample requirements:
  • Solids, UHV compatible
  • Preferred size: approx. 15 x 15 mm2, height up to 3.8 mm
  • Special requirements: diameter up to 100 mm and  max. height 3.8 mm or 59 mm x 9 mm x 12 mm (WxLxH)