INNOVENT - Technologieentwicklung Jena

Micromagnetic simulations of magnetization processes in thin film and multilayers

Theory Group of the MOS-department performs extensive fundamental research of quasistatic and dynamic magnetization processes in various systems (especially in thin magnetic films and multilayers with the layer thicknesses about 1 - 100 nm) using numerical simulations.

Typical examples are:

• Hysteresis loops of extended magnetic films and patterned arrays of nanolelements (nanodot-arrays)
• Ultrasfast magnetization dynamics in nanoelements induced by pulsed magnetic fields
• Spin torque induced magnetization dynamics of nanoelements (spin-injection and related phenomena)

For these purposes our scientists Dr. D.V. Berkov and Dr. N.L. Gorn have developed the extensive micromagnetic software package MicroMagus, which is available commercially; visit http://www.micromagus.de for more details.

Contact:                                                                                                                                         

Molecular dynamics simulations of crystal growth and material-specific properties of semiconducting and ionic materials

The classical molecular dynamics method to simulate physical properties of a many-body system (some 10⁴ atoms)  is based on the description of the interatomic interactions by means of parametrized model potentials and the solution of Newton’s equations of motion for the particles.
With the help of molecular dynamics simulations structural, mechanical, thermodynamic and kinetic properties of technologically important materials (CaF₂, rare-earth halides, multicrystalline Si, ZnO) will be determined as function of temperature and pressure.
The obtained data of the material-specific properties are used as necessary input for computer simulations on mesoscopic and macroscopic scales.

Simulation of the crystal growth of CaF₂ from the melt

Configuration of the Ca²⁺-ions during the crystal growth of CaF₂ from its melt (upper region) at an undercooling T_m - T = 40 K for different crystallographic orientations

Growth velocity v during melt growth of CaF₂ for different crystallographic orientations as function of undercooling T_m – T